Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD25485F5

CSD25485F5

For Reference Only

Part Number CSD25485F5
PNEDA Part # CSD25485F5
Description 20V P-CHANNEL FEMTOFET
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 142,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD25485F5 Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD25485F5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD25485F5 Datasheet
  • where to find CSD25485F5
  • Texas Instruments

  • Texas Instruments CSD25485F5
  • CSD25485F5 PDF Datasheet
  • CSD25485F5 Stock

  • CSD25485F5 Pinout
  • Datasheet CSD25485F5
  • CSD25485F5 Supplier

  • Texas Instruments Distributor
  • CSD25485F5 Price
  • CSD25485F5 Distributor

CSD25485F5 Specifications

Manufacturer
SeriesFemtoFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Rds On (Max) @ Id, Vgs35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4.5V
Vgs (Max)-12V
Input Capacitance (Ciss) (Max) @ Vds533pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PICOSTAR
Package / Case3-XFDFN

The Products You May Be Interested In

AON7200L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15.8A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 62W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

FDMC610P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 22A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerTDFN

IRFU3607PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3070pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

DMNH4006SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRL100HS121

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 6.7A, 10V

Vgs(th) (Max) @ Id

2.3V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 50V

FET Feature

-

Power Dissipation (Max)

11.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-PQFN (2x2)

Package / Case

6-VDFN Exposed Pad

Recently Sold

BZX84C3V3LT1G

BZX84C3V3LT1G

ON Semiconductor

DIODE ZENER 3.3V 225MW SOT23-3

LSXH4L

LSXH4L

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION DPDT 10A 120V

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

EEE-FTH101XAP

EEE-FTH101XAP

Panasonic Electronic Components

CAP ALUM 100UF 20% 50V SMD

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

SMCJ36A

SMCJ36A

Taiwan Semiconductor Corporation

TVS DIODE 36V 58.1V SMC

MAMK2520T2R2M

MAMK2520T2R2M

Taiyo Yuden

FIXED IND 2.2UH 1.9A 117 MOHM

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

MT41K256M16HA-125 AIT:E

MT41K256M16HA-125 AIT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

BD677A

BD677A

STMicroelectronics

TRANS NPN DARL 60V 4A SOT-32