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IXFT12N100F

IXFT12N100F

For Reference Only

Part Number IXFT12N100F
PNEDA Part # IXFT12N100F
Description MOSFET N-CH 1000V 12A TO268
Manufacturer IXYS-RF
Unit Price Request a Quote
In Stock 6,384
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT12N100F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFT12N100F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT12N100F, IXFT12N100F Datasheet (Total Pages: 2, Size: 107.22 KB)
PDFIXFT12N100F Datasheet Cover
IXFT12N100F Datasheet Page 2

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IXFT12N100F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268 (IXFT)
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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