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DDTD123YC-7-F

DDTD123YC-7-F

For Reference Only

Part Number DDTD123YC-7-F
PNEDA Part # DDTD123YC-7-F
Description TRANS PREBIAS NPN 200MW SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 27,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DDTD123YC-7-F Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDDTD123YC-7-F
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
DDTD123YC-7-F, DDTD123YC-7-F Datasheet (Total Pages: 4, Size: 74.59 KB)
PDFDDTD143TC-7-F Datasheet Cover
DDTD143TC-7-F Datasheet Page 2 DDTD143TC-7-F Datasheet Page 3 DDTD143TC-7-F Datasheet Page 4

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DDTD123YC-7-F Specifications

ManufacturerDiodes Incorporated
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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DC Current Gain (hFE) (Min) @ Ic, Vce

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Frequency - Transition

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Supplier Device Package

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