DF11MR12W1M1B11BOMA1
For Reference Only
| Part Number | DF11MR12W1M1B11BOMA1 |
| PNEDA Part # | DF11MR12W1M1B11BOMA1 |
| Description | MOSFET MODULE 1200V 50A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,978 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DF11MR12W1M1B11BOMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | DF11MR12W1M1B11BOMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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DF11MR12W1M1B11BOMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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