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DF120R12W2H3B27BOMA1

DF120R12W2H3B27BOMA1

For Reference Only

Part Number DF120R12W2H3B27BOMA1
PNEDA Part # DF120R12W2H3B27BOMA1
Description IGBT MODULE 800V 50A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF120R12W2H3B27BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF120R12W2H3B27BOMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
DF120R12W2H3B27BOMA1, DF120R12W2H3B27BOMA1 Datasheet (Total Pages: 11, Size: 909.79 KB)
PDFDF120R12W2H3B27BOMA1 Datasheet Cover
DF120R12W2H3B27BOMA1 Datasheet Page 2 DF120R12W2H3B27BOMA1 Datasheet Page 3 DF120R12W2H3B27BOMA1 Datasheet Page 4 DF120R12W2H3B27BOMA1 Datasheet Page 5 DF120R12W2H3B27BOMA1 Datasheet Page 6 DF120R12W2H3B27BOMA1 Datasheet Page 7 DF120R12W2H3B27BOMA1 Datasheet Page 8 DF120R12W2H3B27BOMA1 Datasheet Page 9 DF120R12W2H3B27BOMA1 Datasheet Page 10 DF120R12W2H3B27BOMA1 Datasheet Page 11

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DF120R12W2H3B27BOMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Power - Max180W
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce2.35nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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