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DMG6602SVT-7

DMG6602SVT-7

For Reference Only

Part Number DMG6602SVT-7
PNEDA Part # DMG6602SVT-7
Description MOSFET N/P-CH 30V TSOT23-6
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 1,055,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG6602SVT-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG6602SVT-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DMG6602SVT-7, DMG6602SVT-7 Datasheet (Total Pages: 10, Size: 518.85 KB)
PDFDMG6602SVT-7 Datasheet Cover
DMG6602SVT-7 Datasheet Page 2 DMG6602SVT-7 Datasheet Page 3 DMG6602SVT-7 Datasheet Page 4 DMG6602SVT-7 Datasheet Page 5 DMG6602SVT-7 Datasheet Page 6 DMG6602SVT-7 Datasheet Page 7 DMG6602SVT-7 Datasheet Page 8 DMG6602SVT-7 Datasheet Page 9 DMG6602SVT-7 Datasheet Page 10

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DMG6602SVT-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A, 2.8A
Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
Power - Max840mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-23-6

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