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DMN2005UFG-7

DMN2005UFG-7

For Reference Only

Part Number DMN2005UFG-7
PNEDA Part # DMN2005UFG-7
Description MOSFET N-CH 20V 18.1A POWERDI-8
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 30,990
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2005UFG-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2005UFG-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2005UFG-7, DMN2005UFG-7 Datasheet (Total Pages: 7, Size: 512.58 KB)
PDFDMN2005UFG-13 Datasheet Cover
DMN2005UFG-13 Datasheet Page 2 DMN2005UFG-13 Datasheet Page 3 DMN2005UFG-13 Datasheet Page 4 DMN2005UFG-13 Datasheet Page 5 DMN2005UFG-13 Datasheet Page 6 DMN2005UFG-13 Datasheet Page 7

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DMN2005UFG-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs164nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds6495pF @ 10V
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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