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SISS27DN-T1-GE3

SISS27DN-T1-GE3 SISS27DN-T1-GE3

For Reference Only

Part Number SISS27DN-T1-GE3
PNEDA Part # SISS27DN-T1-GE3
Description MOSFET P-CH 30V 50A PPAK 1212-8S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,637
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 26 - May 31 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS27DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS27DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS27DN-T1-GE3, SISS27DN-T1-GE3 Datasheet (Total Pages: 9, Size: 1,426.14 KB)
PDFSISS27DN-T1-GE3 Datasheet Cover
SISS27DN-T1-GE3 Datasheet Page 2 SISS27DN-T1-GE3 Datasheet Page 3 SISS27DN-T1-GE3 Datasheet Page 4 SISS27DN-T1-GE3 Datasheet Page 5 SISS27DN-T1-GE3 Datasheet Page 6 SISS27DN-T1-GE3 Datasheet Page 7 SISS27DN-T1-GE3 Datasheet Page 8 SISS27DN-T1-GE3 Datasheet Page 9

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SISS27DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5250pF @ 15V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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