Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN3015LSD-13

DMN3015LSD-13

For Reference Only

Part Number DMN3015LSD-13
PNEDA Part # DMN3015LSD-13
Description MOSFET 2N-CH 30V 8.4A 8SO
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN3015LSD-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN3015LSD-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DMN3015LSD-13, DMN3015LSD-13 Datasheet (Total Pages: 6, Size: 285.99 KB)
PDFDMN3015LSD-13 Datasheet Cover
DMN3015LSD-13 Datasheet Page 2 DMN3015LSD-13 Datasheet Page 3 DMN3015LSD-13 Datasheet Page 4 DMN3015LSD-13 Datasheet Page 5 DMN3015LSD-13 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN3015LSD-13 Datasheet
  • where to find DMN3015LSD-13
  • Diodes Incorporated

  • Diodes Incorporated DMN3015LSD-13
  • DMN3015LSD-13 PDF Datasheet
  • DMN3015LSD-13 Stock

  • DMN3015LSD-13 Pinout
  • Datasheet DMN3015LSD-13
  • DMN3015LSD-13 Supplier

  • Diodes Incorporated Distributor
  • DMN3015LSD-13 Price
  • DMN3015LSD-13 Distributor

DMN3015LSD-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
Power - Max1.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

The Products You May Be Interested In

NTHC5513T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A, 2.2A

Rds On (Max) @ Id, Vgs

80mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 10V

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

ChipFET™

DMC3032LSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.1A, 7A

Rds On (Max) @ Id, Vgs

32mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

404.5pF @ 15V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

NVMFD5C470NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11.7A (Ta), 36A (Tc)

Rds On (Max) @ Id, Vgs

11.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 25V

Power - Max

3.1W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

DMP2066LSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.8A

Rds On (Max) @ Id, Vgs

40mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

SSM6L16FETE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100mA

Rds On (Max) @ Id, Vgs

3Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.1V @ 0.1mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

9.3pF @ 3V

Power - Max

150mW

Operating Temperature

150°C (TA)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6 (1.6x1.6)

Recently Sold

ADM2483BRWZ

ADM2483BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC

EN5339QI

EN5339QI

Intel

DC DC CONVERTER 0.6-4.6V 14W

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

GQM1555C2D3R3CB01D

GQM1555C2D3R3CB01D

Murata

CAP CER 3.3PF 200V NP0 0402

IS34ML01G081-TLI-TR

IS34ML01G081-TLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1G PARALLEL 48TSOP I

RB521S-30TE61

RB521S-30TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

ADSP-BF527BBCZ-5A

ADSP-BF527BBCZ-5A

Analog Devices

IC DSP 16BIT 533MHZ 208CSBGA

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

MBT3906DW1T1G

MBT3906DW1T1G

ON Semiconductor

TRANS 2PNP 40V 0.2A SC88