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DMT10H015LCG-13

DMT10H015LCG-13

For Reference Only

Part Number DMT10H015LCG-13
PNEDA Part # DMT10H015LCG-13
Description MOSFET NCH 100V 9.4A 8VDFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,794
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMT10H015LCG-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMT10H015LCG-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMT10H015LCG-13, DMT10H015LCG-13 Datasheet (Total Pages: 7, Size: 506.9 KB)
PDFDMT10H015LCG-7 Datasheet Cover
DMT10H015LCG-7 Datasheet Page 2 DMT10H015LCG-7 Datasheet Page 3 DMT10H015LCG-7 Datasheet Page 4 DMT10H015LCG-7 Datasheet Page 5 DMT10H015LCG-7 Datasheet Page 6 DMT10H015LCG-7 Datasheet Page 7

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DMT10H015LCG-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1871pF @ 50V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageV-DFN3333-8
Package / Case8-VDFN Exposed Pad

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