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DRA5123Y0L

DRA5123Y0L

For Reference Only

Part Number DRA5123Y0L
PNEDA Part # DRA5123Y0L
Description TRANS PREBIAS PNP 150MW SMINI3
Manufacturer Panasonic Electronic Components
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DRA5123Y0L Resources

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DRA5123Y0L Specifications

ManufacturerPanasonic Electronic Components
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-85
Supplier Device PackageSMini3-F2-B

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector Cutoff (Max)

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Toshiba Semiconductor and Storage

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Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Frequency - Transition

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Package / Case

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Panasonic Electronic Components

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Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Rohm Semiconductor

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Supplier Device Package

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