Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RN1101,LF(CT

RN1101,LF(CT

For Reference Only

Part Number RN1101,LF(CT
PNEDA Part # RN1101-LF-CT
Description TRANS PREBIAS NPN 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1101 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1101,LF(CT
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1101, RN1101 Datasheet (Total Pages: 8, Size: 562.02 KB)
PDFRN1101ACT(TPL3) Datasheet Cover
RN1101ACT(TPL3) Datasheet Page 2 RN1101ACT(TPL3) Datasheet Page 3 RN1101ACT(TPL3) Datasheet Page 4 RN1101ACT(TPL3) Datasheet Page 5 RN1101ACT(TPL3) Datasheet Page 6 RN1101ACT(TPL3) Datasheet Page 7 RN1101ACT(TPL3) Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RN1101,LF(CT Datasheet
  • where to find RN1101,LF(CT
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage RN1101,LF(CT
  • RN1101,LF(CT PDF Datasheet
  • RN1101,LF(CT Stock

  • RN1101,LF(CT Pinout
  • Datasheet RN1101,LF(CT
  • RN1101,LF(CT Supplier

  • Toshiba Semiconductor and Storage Distributor
  • RN1101,LF(CT Price
  • RN1101,LF(CT Distributor

RN1101 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

The Products You May Be Interested In

DDTA114TUA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

DTC125TKAT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

200 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50µA, 500µA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

DRC2144E0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

Mini3-G3-B

DTC124EMT2L

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

30mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VMT3

DTDG14GPT100

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

60V

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 500mA, 2V

Vce Saturation (Max) @ Ib, Ic

400mV @ 5mA, 500mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

80MHz

Power - Max

2W

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

MPT3

Recently Sold

MTC1S2403MC-R13

MTC1S2403MC-R13

Murata Power Solutions

DC DC CONVERTER 3.3V 1W

MT25QL128ABA1ESE-0SIT

MT25QL128ABA1ESE-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8SOP2

MTFC8GAKAJCN-4M IT

MTFC8GAKAJCN-4M IT

Micron Technology Inc.

IC FLASH 64G MMC

MAX811MEUS+T

MAX811MEUS+T

Maxim Integrated

IC VOLT MON W/RESET SOT143-4

T520B127M006ATE035

T520B127M006ATE035

KEMET

CAP TANT POLY 120UF 6.3V 3528

FDLL4148

FDLL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA LL34

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

CDRH127/LDNP-220MC

CDRH127/LDNP-220MC

Sumida

FIXED IND 22UH 4.7A 36.4 MOHM

SRR0735A-100M

SRR0735A-100M

Bourns

FIXED IND 10UH 2.1A 72 MOHM SMD

MB96F696RBPMC-GSE1

MB96F696RBPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 288KB FLASH 100LQFP

D44VH10G

D44VH10G

ON Semiconductor

TRANS NPN 80V 15A TO220AB

ADA4861-3YRZ-RL7

ADA4861-3YRZ-RL7

Analog Devices

IC OPAMP CFA 3 CIRCUIT 14SOIC