EFC6617R-A-TF
For Reference Only
| Part Number | EFC6617R-A-TF |
| PNEDA Part # | EFC6617R-A-TF |
| Description | MOSFET N-CH DUAL 2.5V 6CSP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,884 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EFC6617R-A-TF Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | EFC6617R-A-TF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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EFC6617R-A-TF Specifications
| Manufacturer | ON Semiconductor |
| Series | * |
| FET Type | - |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
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