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EPC2012

EPC2012

For Reference Only

Part Number EPC2012
PNEDA Part # EPC2012
Description GANFET TRANS 200V 3A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2012 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2012
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2012, EPC2012 Datasheet (Total Pages: 6, Size: 1,576.71 KB)
PDFEPC2012 Datasheet Cover
EPC2012 Datasheet Page 2 EPC2012 Datasheet Page 3 EPC2012 Datasheet Page 4 EPC2012 Datasheet Page 5 EPC2012 Datasheet Page 6

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EPC2012 Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.8nC @ 5V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds145pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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