EPC2012
For Reference Only
| Part Number | EPC2012 |
| PNEDA Part # | EPC2012 |
| Description | GANFET TRANS 200V 3A BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 7,056 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EPC2012 Resources
| Brand | EPC |
| ECAD Module |
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| Mfr. Part Number | EPC2012 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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EPC2012 Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 5V |
| Vgs (Max) | +6V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 145pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 50V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
