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EPC2012C

EPC2012C

For Reference Only

Part Number EPC2012C
PNEDA Part # EPC2012C
Description GANFET TRANS 200V 5A BUMPED DIE
Manufacturer EPC
Unit Price
1 ---------- $2,331.2479
50 ---------- $2,221.9706
100 ---------- $2,112.6934
200 ---------- $2,003.4161
400 ---------- $1,912.3518
500 ---------- $1,821.2874
In Stock 1,650
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2012C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2012C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2012C, EPC2012C Datasheet (Total Pages: 6, Size: 1,143.19 KB)
PDFEPC2012C Datasheet Cover
EPC2012C Datasheet Page 2 EPC2012C Datasheet Page 3 EPC2012C Datasheet Page 4 EPC2012C Datasheet Page 5 EPC2012C Datasheet Page 6

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EPC2012C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.3nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (4-Solder Bar)
Package / CaseDie

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