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EPC2103ENG

EPC2103ENG

For Reference Only

Part Number EPC2103ENG
PNEDA Part # EPC2103ENG
Description GAN TRANS 2N-CH 80V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2103ENG Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2103ENG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2103ENG, EPC2103ENG Datasheet (Total Pages: 7, Size: 1,715.9 KB)
PDFEPC2103ENG Datasheet Cover
EPC2103ENG Datasheet Page 2 EPC2103ENG Datasheet Page 3 EPC2103ENG Datasheet Page 4 EPC2103ENG Datasheet Page 5 EPC2103ENG Datasheet Page 6 EPC2103ENG Datasheet Page 7

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EPC2103ENG Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 40V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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