EPC2103ENG
For Reference Only
| Part Number | EPC2103ENG |
| PNEDA Part # | EPC2103ENG |
| Description | GAN TRANS 2N-CH 80V BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 5,076 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
EPC2103ENG Resources
| Brand | EPC |
| ECAD Module |
|
| Mfr. Part Number | EPC2103ENG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EPC2103ENG Datasheet
- where to find EPC2103ENG
- EPC
- EPC EPC2103ENG
- EPC2103ENG PDF Datasheet
- EPC2103ENG Stock
- EPC2103ENG Pinout
- Datasheet EPC2103ENG
- EPC2103ENG Supplier
- EPC Distributor
- EPC2103ENG Price
- EPC2103ENG Distributor
EPC2103ENG Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Rds On (Max) @ Id, Vgs 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1869pF @ 15V Power - Max 48W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 5.5A Rds On (Max) @ Id, Vgs 25mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1984pF @ 6V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N and P-Channel FET Feature Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 11.6A (Tc), 9A (Tc) Rds On (Max) @ Id, Vgs 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V, 9.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 677pF @ 10V, 744pF @ 10V Power - Max 6.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VDFN Exposed Pad Supplier Device Package 6-TDFN (2x2) |
Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.6A Rds On (Max) @ Id, Vgs 75mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 608.4pF @ 6V Power - Max 1.15W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.6A Rds On (Max) @ Id, Vgs 20mOhm @ 9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1931pF @ 15V Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
