EPC2103ENG Datasheet
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 40V Power - Max - Operating Temperature - Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 28A Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
