EPC2103ENGRT
For Reference Only
| Part Number | EPC2103ENGRT |
| PNEDA Part # | EPC2103ENGRT |
| Description | GANFET TRANS SYM HALF BRDG 80V |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 45,828 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EPC2103ENGRT Resources
| Brand | EPC |
| ECAD Module |
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| Mfr. Part Number | EPC2103ENGRT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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EPC2103ENGRT Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 40V |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
