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ESH1B-M3/5AT

ESH1B-M3/5AT

For Reference Only

Part Number ESH1B-M3/5AT
PNEDA Part # ESH1B-M3-5AT
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ESH1B-M3/5AT Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberESH1B-M3/5AT
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ESH1B-M3/5AT, ESH1B-M3/5AT Datasheet (Total Pages: 5, Size: 81.8 KB)
PDFESH1DHE3/61T Datasheet Cover
ESH1DHE3/61T Datasheet Page 2 ESH1DHE3/61T Datasheet Page 3 ESH1DHE3/61T Datasheet Page 4 ESH1DHE3/61T Datasheet Page 5

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ESH1B-M3/5AT Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If900mV @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F25pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 175°C

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