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ESH3DHE3/9AT

ESH3DHE3/9AT

For Reference Only

Part Number ESH3DHE3/9AT
PNEDA Part # ESH3DHE3-9AT
Description DIODE GEN PURP 200V 3A DO214AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ESH3DHE3/9AT Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberESH3DHE3/9AT
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ESH3DHE3/9AT, ESH3DHE3/9AT Datasheet (Total Pages: 5, Size: 88.03 KB)
PDFESH3DHE3/57T Datasheet Cover
ESH3DHE3/57T Datasheet Page 2 ESH3DHE3/57T Datasheet Page 3 ESH3DHE3/57T Datasheet Page 4 ESH3DHE3/57T Datasheet Page 5

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ESH3DHE3/9AT Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If900mV @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)40ns
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 175°C

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