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FCH165N65S3R0-F155

FCH165N65S3R0-F155

For Reference Only

Part Number FCH165N65S3R0-F155
PNEDA Part # FCH165N65S3R0-F155
Description SF3 650V 165MOHM E TO247L
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCH165N65S3R0-F155 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCH165N65S3R0-F155
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCH165N65S3R0-F155, FCH165N65S3R0-F155 Datasheet (Total Pages: 10, Size: 428.2 KB)
PDFFCH165N65S3R0-F155 Datasheet Cover
FCH165N65S3R0-F155 Datasheet Page 2 FCH165N65S3R0-F155 Datasheet Page 3 FCH165N65S3R0-F155 Datasheet Page 4 FCH165N65S3R0-F155 Datasheet Page 5 FCH165N65S3R0-F155 Datasheet Page 6 FCH165N65S3R0-F155 Datasheet Page 7 FCH165N65S3R0-F155 Datasheet Page 8 FCH165N65S3R0-F155 Datasheet Page 9 FCH165N65S3R0-F155 Datasheet Page 10

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FCH165N65S3R0-F155 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 400V
FET Feature-
Power Dissipation (Max)154W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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