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FCH190N65F-F155

FCH190N65F-F155

For Reference Only

Part Number FCH190N65F-F155
PNEDA Part # FCH190N65F-F155
Description MOSFET N-CH 650V 20.6A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCH190N65F-F155 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCH190N65F-F155
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCH190N65F-F155, FCH190N65F-F155 Datasheet (Total Pages: 10, Size: 482.39 KB)
PDFFCH190N65F-F155 Datasheet Cover
FCH190N65F-F155 Datasheet Page 2 FCH190N65F-F155 Datasheet Page 3 FCH190N65F-F155 Datasheet Page 4 FCH190N65F-F155 Datasheet Page 5 FCH190N65F-F155 Datasheet Page 6 FCH190N65F-F155 Datasheet Page 7 FCH190N65F-F155 Datasheet Page 8 FCH190N65F-F155 Datasheet Page 9 FCH190N65F-F155 Datasheet Page 10

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FCH190N65F-F155 Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3225pF @ 100V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

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