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FCP150N65F

FCP150N65F

For Reference Only

Part Number FCP150N65F
PNEDA Part # FCP150N65F
Description MOSFET N-CH 650V 24A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP150N65F Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP150N65F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP150N65F, FCP150N65F Datasheet (Total Pages: 12, Size: 1,680.74 KB)
PDFFCP150N65F Datasheet Cover
FCP150N65F Datasheet Page 2 FCP150N65F Datasheet Page 3 FCP150N65F Datasheet Page 4 FCP150N65F Datasheet Page 5 FCP150N65F Datasheet Page 6 FCP150N65F Datasheet Page 7 FCP150N65F Datasheet Page 8 FCP150N65F Datasheet Page 9 FCP150N65F Datasheet Page 10 FCP150N65F Datasheet Page 11

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FCP150N65F Specifications

ManufacturerON Semiconductor
SeriesHiPerFET™, Polar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3737pF @ 100V
FET Feature-
Power Dissipation (Max)298W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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