FCP165N65S3R0
For Reference Only
| Part Number | FCP165N65S3R0 |
| PNEDA Part # | FCP165N65S3R0 |
| Description | SUPERFET3 650V TO220 PKG |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,996 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCP165N65S3R0 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCP165N65S3R0 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FCP165N65S3R0 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® III |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.9mA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 154W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |
