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FCP9N60N

FCP9N60N

For Reference Only

Part Number FCP9N60N
PNEDA Part # FCP9N60N
Description MOSFET N-CH 600V 9A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,816
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP9N60N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP9N60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP9N60N, FCP9N60N Datasheet (Total Pages: 12, Size: 755.78 KB)
PDFFCPF9N60NTYDTU Datasheet Cover
FCPF9N60NTYDTU Datasheet Page 2 FCPF9N60NTYDTU Datasheet Page 3 FCPF9N60NTYDTU Datasheet Page 4 FCPF9N60NTYDTU Datasheet Page 5 FCPF9N60NTYDTU Datasheet Page 6 FCPF9N60NTYDTU Datasheet Page 7 FCPF9N60NTYDTU Datasheet Page 8 FCPF9N60NTYDTU Datasheet Page 9 FCPF9N60NTYDTU Datasheet Page 10 FCPF9N60NTYDTU Datasheet Page 11

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FCP9N60N Specifications

ManufacturerON Semiconductor
SeriesSuperMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1240pF @ 100V
FET Feature-
Power Dissipation (Max)83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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