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FCPF099N65S3

FCPF099N65S3

For Reference Only

Part Number FCPF099N65S3
PNEDA Part # FCPF099N65S3
Description MOSFET N-CH 650V 30A TO220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF099N65S3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF099N65S3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF099N65S3, FCPF099N65S3 Datasheet (Total Pages: 10, Size: 308.72 KB)
PDFFCPF099N65S3 Datasheet Cover
FCPF099N65S3 Datasheet Page 2 FCPF099N65S3 Datasheet Page 3 FCPF099N65S3 Datasheet Page 4 FCPF099N65S3 Datasheet Page 5 FCPF099N65S3 Datasheet Page 6 FCPF099N65S3 Datasheet Page 7 FCPF099N65S3 Datasheet Page 8 FCPF099N65S3 Datasheet Page 9 FCPF099N65S3 Datasheet Page 10

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FCPF099N65S3 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2310pF @ 400V
FET Feature-
Power Dissipation (Max)43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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