FCU360N65S3R0
For Reference Only
| Part Number | FCU360N65S3R0 |
| PNEDA Part # | FCU360N65S3R0 |
| Description | MOSFET N-CH 600V IPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 18,990 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
FCU360N65S3R0 Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | FCU360N65S3R0 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- FCU360N65S3R0 Datasheet
- where to find FCU360N65S3R0
- ON Semiconductor
- ON Semiconductor FCU360N65S3R0
- FCU360N65S3R0 PDF Datasheet
- FCU360N65S3R0 Stock
- FCU360N65S3R0 Pinout
- Datasheet FCU360N65S3R0
- FCU360N65S3R0 Supplier
- ON Semiconductor Distributor
- FCU360N65S3R0 Price
- FCU360N65S3R0 Distributor
FCU360N65S3R0 Specifications
| Manufacturer | ON Semiconductor |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Stub Leads, IPak |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 70µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7180pF @ 25V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 12A, 10V Vgs(th) (Max) @ Id 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 240mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 783pF @ 100V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 4700V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 1A, 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 25V FET Feature - Power Dissipation (Max) 220W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUSi5-Pak™ Package / Case ISOPLUSi5-Pak™ |
