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IPP100N04S4H2AKSA1

IPP100N04S4H2AKSA1

For Reference Only

Part Number IPP100N04S4H2AKSA1
PNEDA Part # IPP100N04S4H2AKSA1
Description MOSFET N-CH 40V 100A TO220-3-1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP100N04S4H2AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP100N04S4H2AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP100N04S4H2AKSA1, IPP100N04S4H2AKSA1 Datasheet (Total Pages: 9, Size: 135.25 KB)
PDFIPP100N04S4H2AKSA1 Datasheet Cover
IPP100N04S4H2AKSA1 Datasheet Page 2 IPP100N04S4H2AKSA1 Datasheet Page 3 IPP100N04S4H2AKSA1 Datasheet Page 4 IPP100N04S4H2AKSA1 Datasheet Page 5 IPP100N04S4H2AKSA1 Datasheet Page 6 IPP100N04S4H2AKSA1 Datasheet Page 7 IPP100N04S4H2AKSA1 Datasheet Page 8 IPP100N04S4H2AKSA1 Datasheet Page 9

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IPP100N04S4H2AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7180pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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