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FDA50N50

FDA50N50

For Reference Only

Part Number FDA50N50
PNEDA Part # FDA50N50
Description MOSFET N-CH 500V 48A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDA50N50 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDA50N50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDA50N50, FDA50N50 Datasheet (Total Pages: 11, Size: 457.39 KB)
PDFFDH50N50-F133 Datasheet Cover
FDH50N50-F133 Datasheet Page 2 FDH50N50-F133 Datasheet Page 3 FDH50N50-F133 Datasheet Page 4 FDH50N50-F133 Datasheet Page 5 FDH50N50-F133 Datasheet Page 6 FDH50N50-F133 Datasheet Page 7 FDH50N50-F133 Datasheet Page 8 FDH50N50-F133 Datasheet Page 9 FDH50N50-F133 Datasheet Page 10 FDH50N50-F133 Datasheet Page 11

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FDA50N50 Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs137nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6460pF @ 25V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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