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FDB16AN08A0

FDB16AN08A0

For Reference Only

Part Number FDB16AN08A0
PNEDA Part # FDB16AN08A0
Description MOSFET N-CH 75V 58A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB16AN08A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB16AN08A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB16AN08A0, FDB16AN08A0 Datasheet (Total Pages: 14, Size: 1,052.39 KB)
PDFFDB16AN08A0 Datasheet Cover
FDB16AN08A0 Datasheet Page 2 FDB16AN08A0 Datasheet Page 3 FDB16AN08A0 Datasheet Page 4 FDB16AN08A0 Datasheet Page 5 FDB16AN08A0 Datasheet Page 6 FDB16AN08A0 Datasheet Page 7 FDB16AN08A0 Datasheet Page 8 FDB16AN08A0 Datasheet Page 9 FDB16AN08A0 Datasheet Page 10 FDB16AN08A0 Datasheet Page 11

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FDB16AN08A0 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1857pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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