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FDD86113LZ

FDD86113LZ

For Reference Only

Part Number FDD86113LZ
PNEDA Part # FDD86113LZ
Description MOSFET N-CH 100V 4.2A DPAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 95,688
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD86113LZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD86113LZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD86113LZ, FDD86113LZ Datasheet (Total Pages: 8, Size: 468.11 KB)
PDFFDD86113LZ Datasheet Cover
FDD86113LZ Datasheet Page 2 FDD86113LZ Datasheet Page 3 FDD86113LZ Datasheet Page 4 FDD86113LZ Datasheet Page 5 FDD86113LZ Datasheet Page 6 FDD86113LZ Datasheet Page 7 FDD86113LZ Datasheet Page 8

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FDD86113LZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs104mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds285pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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