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FDH50N50-F133

FDH50N50-F133

For Reference Only

Part Number FDH50N50-F133
PNEDA Part # FDH50N50-F133
Description MOSFET N-CH 500V 48A TO-247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 11,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDH50N50-F133 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDH50N50-F133
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDH50N50-F133, FDH50N50-F133 Datasheet (Total Pages: 11, Size: 457.39 KB)
PDFFDH50N50-F133 Datasheet Cover
FDH50N50-F133 Datasheet Page 2 FDH50N50-F133 Datasheet Page 3 FDH50N50-F133 Datasheet Page 4 FDH50N50-F133 Datasheet Page 5 FDH50N50-F133 Datasheet Page 6 FDH50N50-F133 Datasheet Page 7 FDH50N50-F133 Datasheet Page 8 FDH50N50-F133 Datasheet Page 9 FDH50N50-F133 Datasheet Page 10 FDH50N50-F133 Datasheet Page 11

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FDH50N50-F133 Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs137nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6460pF @ 25V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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