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FDN306P

FDN306P

For Reference Only

Part Number FDN306P
PNEDA Part # FDN306P
Description MOSFET P-CH 12V 2.6A SSOT3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 1,796,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDN306P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDN306P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDN306P, FDN306P Datasheet (Total Pages: 7, Size: 260.9 KB)
PDFFDN306P Datasheet Cover
FDN306P Datasheet Page 2 FDN306P Datasheet Page 3 FDN306P Datasheet Page 4 FDN306P Datasheet Page 5 FDN306P Datasheet Page 6 FDN306P Datasheet Page 7

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FDN306P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1138pF @ 6V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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