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FDN308P

FDN308P

For Reference Only

Part Number FDN308P
PNEDA Part # FDN308P
Description MOSFET P-CH 20V 1.5A SSOT-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDN308P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDN308P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDN308P, FDN308P Datasheet (Total Pages: 7, Size: 211.81 KB)
PDFFDN308P Datasheet Cover
FDN308P Datasheet Page 2 FDN308P Datasheet Page 3 FDN308P Datasheet Page 4 FDN308P Datasheet Page 5 FDN308P Datasheet Page 6 FDN308P Datasheet Page 7

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FDN308P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs125mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds341pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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