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FDN352AP

FDN352AP

For Reference Only

Part Number FDN352AP
PNEDA Part # FDN352AP
Description MOSFET P-CH 30V 1.3A SSOT-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 1,724,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDN352AP Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDN352AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDN352AP, FDN352AP Datasheet (Total Pages: 7, Size: 240.04 KB)
PDFFDN352AP Datasheet Cover
FDN352AP Datasheet Page 2 FDN352AP Datasheet Page 3 FDN352AP Datasheet Page 4 FDN352AP Datasheet Page 5 FDN352AP Datasheet Page 6 FDN352AP Datasheet Page 7

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FDN352AP Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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