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FDP085N10A-F102

FDP085N10A-F102

For Reference Only

Part Number FDP085N10A-F102
PNEDA Part # FDP085N10A-F102
Description MOSFET N-CH 100V 96A TO-220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 40,152
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP085N10A-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP085N10A-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP085N10A-F102, FDP085N10A-F102 Datasheet (Total Pages: 9, Size: 4,025.74 KB)
PDFFDP085N10A-F102 Datasheet Cover
FDP085N10A-F102 Datasheet Page 2 FDP085N10A-F102 Datasheet Page 3 FDP085N10A-F102 Datasheet Page 4 FDP085N10A-F102 Datasheet Page 5 FDP085N10A-F102 Datasheet Page 6 FDP085N10A-F102 Datasheet Page 7 FDP085N10A-F102 Datasheet Page 8 FDP085N10A-F102 Datasheet Page 9

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FDP085N10A-F102 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2695pF @ 50V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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