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FDP16AN08A0

FDP16AN08A0

For Reference Only

Part Number FDP16AN08A0
PNEDA Part # FDP16AN08A0
Description MOSFET N-CH 75V 58A TO-220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,670
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP16AN08A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP16AN08A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP16AN08A0, FDP16AN08A0 Datasheet (Total Pages: 13, Size: 632.61 KB)
PDFFDP16AN08A0 Datasheet Cover
FDP16AN08A0 Datasheet Page 2 FDP16AN08A0 Datasheet Page 3 FDP16AN08A0 Datasheet Page 4 FDP16AN08A0 Datasheet Page 5 FDP16AN08A0 Datasheet Page 6 FDP16AN08A0 Datasheet Page 7 FDP16AN08A0 Datasheet Page 8 FDP16AN08A0 Datasheet Page 9 FDP16AN08A0 Datasheet Page 10 FDP16AN08A0 Datasheet Page 11

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FDP16AN08A0 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1857pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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