Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDZ209N

FDZ209N

For Reference Only

Part Number FDZ209N
PNEDA Part # FDZ209N
Description MOSFET N-CH 60V 4A 12-BGA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDZ209N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDZ209N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDZ209N, FDZ209N Datasheet (Total Pages: 6, Size: 172.18 KB)
PDFFDZ209N Datasheet Cover
FDZ209N Datasheet Page 2 FDZ209N Datasheet Page 3 FDZ209N Datasheet Page 4 FDZ209N Datasheet Page 5 FDZ209N Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDZ209N Datasheet
  • where to find FDZ209N
  • ON Semiconductor

  • ON Semiconductor FDZ209N
  • FDZ209N PDF Datasheet
  • FDZ209N Stock

  • FDZ209N Pinout
  • Datasheet FDZ209N
  • FDZ209N Supplier

  • ON Semiconductor Distributor
  • FDZ209N Price
  • FDZ209N Distributor

FDZ209N Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs80mOhm @ 4A, 5V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds657pF @ 30V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package12-BGA (2x2.5)
Package / Case12-WFBGA

The Products You May Be Interested In

SPB100N03S2-03 G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7020pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL3715STRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

XN0NE9200L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V

Rds On (Max) @ Id, Vgs

450mOhm @ 800mA, 4V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Mini5-G1

Package / Case

SC-74A, SOT-753

RAQ045P01TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

-8V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 6V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

SPN02N60S5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

5.5V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

MAX6370KA+T

MAX6370KA+T

Maxim Integrated

IC TIMER WATCHDOG SOT23-8

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

T520B127M006ATE035

T520B127M006ATE035

KEMET

CAP TANT POLY 120UF 6.3V 3528

NTR4502PT1G

NTR4502PT1G

ON Semiconductor

MOSFET P-CH 30V 1.13A SOT-23

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

7443320068

7443320068

Wurth Electronics

FIXED IND 680NH 26A 0.72 MOHM

LTC6363IMS8#PBF

LTC6363IMS8#PBF

Linear Technology/Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8MSOP

STM32H743VIT6

STM32H743VIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 100LQFP

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

AT24C256C-SSHL-T

AT24C256C-SSHL-T

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8SOIC

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN