FDZ371PZ
For Reference Only
| Part Number | FDZ371PZ |
| PNEDA Part # | FDZ371PZ |
| Description | MOSFET P-CH 20V 3.7A WLCSP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,480 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDZ371PZ Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDZ371PZ |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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FDZ371PZ Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-WLCSP (1x1) |
| Package / Case | 4-XFBGA, WLCSP |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package 4-DIP, Hexdip, HVMDIP Package / Case 4-DIP (0.300", 7.62mm) |
