FF150R12KE3GB2HOSA1
For Reference Only
| Part Number | FF150R12KE3GB2HOSA1 | ||||||||||||||||||
| PNEDA Part # | FF150R12KE3GB2HOSA1 | ||||||||||||||||||
| Description | IGBT MODULE VCES 1200V 150A | ||||||||||||||||||
| Manufacturer | Infineon Technologies | ||||||||||||||||||
| Unit Price |
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| In Stock | 3,992 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FF150R12KE3GB2HOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | FF150R12KE3GB2HOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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FF150R12KE3GB2HOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| IGBT Type | - |
| Configuration | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Current - Collector (Ic) (Max) | - |
| Power - Max | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Current - Collector Cutoff (Max) | - |
| Input Capacitance (Cies) @ Vce | - |
| Input | - |
| NTC Thermistor | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Configuration Full Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 350A Power - Max 1000W Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 200A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce 12.3nF @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case SP6 Supplier Device Package SP6 |
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