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FGA30N60LSDTU

FGA30N60LSDTU

For Reference Only

Part Number FGA30N60LSDTU
PNEDA Part # FGA30N60LSDTU
Description IGBT 600V 60A 480W TO3PN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 11,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA30N60LSDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA30N60LSDTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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FGA30N60LSDTU Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 30A
Power - Max480W
Switching Energy1.1mJ (on), 21mJ (off)
Input TypeStandard
Gate Charge225nC
Td (on/off) @ 25°C18ns/250ns
Test Condition400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)35ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

460µJ (on), 180µJ (off)

Input Type

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Gate Charge

13.3nC

Td (on/off) @ 25°C

16ns/40ns

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450V, 8A, 30Ohm, 15V

Reverse Recovery Time (trr)

114ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

TO-220AB

IRGS4620DPBF

Infineon Technologies

Manufacturer

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

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Switching Energy

75µJ (on), 225µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

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Operating Temperature

-40°C ~ 175°C (TJ)

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Package / Case

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Supplier Device Package

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HGTP3N60A4D

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

70W

Switching Energy

37µJ (on), 25µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

390V, 3A, 50Ohm, 15V

Reverse Recovery Time (trr)

29ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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STGF7H60DF

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

28A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 7A

Power - Max

24W

Switching Energy

99µJ (on), 100µJ (off)

Input Type

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Gate Charge

46nC

Td (on/off) @ 25°C

30ns/160ns

Test Condition

400V, 7A, 47Ohm, 15V

Reverse Recovery Time (trr)

136ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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