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FQA10N80C

FQA10N80C

For Reference Only

Part Number FQA10N80C
PNEDA Part # FQA10N80C
Description MOSFET N-CH 800V 10A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA10N80C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA10N80C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA10N80C, FQA10N80C Datasheet (Total Pages: 8, Size: 620.74 KB)
PDFFQA10N80C Datasheet Cover
FQA10N80C Datasheet Page 2 FQA10N80C Datasheet Page 3 FQA10N80C Datasheet Page 4 FQA10N80C Datasheet Page 5 FQA10N80C Datasheet Page 6 FQA10N80C Datasheet Page 7 FQA10N80C Datasheet Page 8

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FQA10N80C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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