Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQA12N60

FQA12N60

For Reference Only

Part Number FQA12N60
PNEDA Part # FQA12N60
Description MOSFET N-CH 600V 12A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA12N60 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA12N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA12N60, FQA12N60 Datasheet (Total Pages: 8, Size: 535.32 KB)
PDFFQA12N60 Datasheet Cover
FQA12N60 Datasheet Page 2 FQA12N60 Datasheet Page 3 FQA12N60 Datasheet Page 4 FQA12N60 Datasheet Page 5 FQA12N60 Datasheet Page 6 FQA12N60 Datasheet Page 7 FQA12N60 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQA12N60 Datasheet
  • where to find FQA12N60
  • ON Semiconductor

  • ON Semiconductor FQA12N60
  • FQA12N60 PDF Datasheet
  • FQA12N60 Stock

  • FQA12N60 Pinout
  • Datasheet FQA12N60
  • FQA12N60 Supplier

  • ON Semiconductor Distributor
  • FQA12N60 Price
  • FQA12N60 Distributor

FQA12N60 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

STW75N60DM6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

72A

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

NTMFS4854NST1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SENSEFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

15.2A (Ta), 149A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.2V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 11.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4830pF @ 12V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SO-8FL

Package / Case

8-PowerTDFN

NP110N03PUG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 288W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZVP2110ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

SIE804DF-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

38mOhm @ 7.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 50V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (LH)

Package / Case

10-PolarPAK® (LH)

Recently Sold

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

FMMT593TA

FMMT593TA

Diodes Incorporated

TRANS PNP 100V 1A SOT23-3

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

T521X336M050ATE075

T521X336M050ATE075

KEMET

CAP TANTALUM 33UF 50V 2917

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

BK2125HS750-T

BK2125HS750-T

Taiyo Yuden

FERRITE BEAD 75 OHM 0805 1LN

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

STPS0520Z

STPS0520Z

STMicroelectronics

DIODE SCHOTTKY 20V 500MA SOD123