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NP110N03PUG-E1-AY

NP110N03PUG-E1-AY

For Reference Only

Part Number NP110N03PUG-E1-AY
PNEDA Part # NP110N03PUG-E1-AY
Description MOSFET N-CH 30V MP-25ZP/TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP110N03PUG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP110N03PUG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP110N03PUG-E1-AY, NP110N03PUG-E1-AY Datasheet (Total Pages: 9, Size: 259.62 KB)
PDFNP110N03PUG-E1-AY Datasheet Cover
NP110N03PUG-E1-AY Datasheet Page 2 NP110N03PUG-E1-AY Datasheet Page 3 NP110N03PUG-E1-AY Datasheet Page 4 NP110N03PUG-E1-AY Datasheet Page 5 NP110N03PUG-E1-AY Datasheet Page 6 NP110N03PUG-E1-AY Datasheet Page 7 NP110N03PUG-E1-AY Datasheet Page 8 NP110N03PUG-E1-AY Datasheet Page 9

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NP110N03PUG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs380nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds24600pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 288W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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