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FQAF6N80

FQAF6N80

For Reference Only

Part Number FQAF6N80
PNEDA Part # FQAF6N80
Description MOSFET N-CH 800V 4.4A TO-3PF
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQAF6N80 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQAF6N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQAF6N80, FQAF6N80 Datasheet (Total Pages: 8, Size: 661.21 KB)
PDFFQAF6N80 Datasheet Cover
FQAF6N80 Datasheet Page 2 FQAF6N80 Datasheet Page 3 FQAF6N80 Datasheet Page 4 FQAF6N80 Datasheet Page 5 FQAF6N80 Datasheet Page 6 FQAF6N80 Datasheet Page 7 FQAF6N80 Datasheet Page 8

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FQAF6N80 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.95Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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