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FQB13N10LTM

FQB13N10LTM

For Reference Only

Part Number FQB13N10LTM
PNEDA Part # FQB13N10LTM
Description MOSFET N-CH 100V 12.8A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB13N10LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB13N10LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB13N10LTM, FQB13N10LTM Datasheet (Total Pages: 9, Size: 566.46 KB)
PDFFQB13N10LTM Datasheet Cover
FQB13N10LTM Datasheet Page 2 FQB13N10LTM Datasheet Page 3 FQB13N10LTM Datasheet Page 4 FQB13N10LTM Datasheet Page 5 FQB13N10LTM Datasheet Page 6 FQB13N10LTM Datasheet Page 7 FQB13N10LTM Datasheet Page 8 FQB13N10LTM Datasheet Page 9

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FQB13N10LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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