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FQB4N90TM

FQB4N90TM

For Reference Only

Part Number FQB4N90TM
PNEDA Part # FQB4N90TM
Description MOSFET N-CH 900V 4.2A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB4N90TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB4N90TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB4N90TM, FQB4N90TM Datasheet (Total Pages: 9, Size: 644.6 KB)
PDFFQB4N90TM Datasheet Cover
FQB4N90TM Datasheet Page 2 FQB4N90TM Datasheet Page 3 FQB4N90TM Datasheet Page 4 FQB4N90TM Datasheet Page 5 FQB4N90TM Datasheet Page 6 FQB4N90TM Datasheet Page 7 FQB4N90TM Datasheet Page 8 FQB4N90TM Datasheet Page 9

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FQB4N90TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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