Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQB5N30TM

FQB5N30TM

For Reference Only

Part Number FQB5N30TM
PNEDA Part # FQB5N30TM
Description MOSFET N-CH 300V 5.4A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 10 - Jul 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB5N30TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB5N30TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB5N30TM, FQB5N30TM Datasheet (Total Pages: 9, Size: 770.26 KB)
PDFFQB5N30TM Datasheet Cover
FQB5N30TM Datasheet Page 2 FQB5N30TM Datasheet Page 3 FQB5N30TM Datasheet Page 4 FQB5N30TM Datasheet Page 5 FQB5N30TM Datasheet Page 6 FQB5N30TM Datasheet Page 7 FQB5N30TM Datasheet Page 8 FQB5N30TM Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQB5N30TM Datasheet
  • where to find FQB5N30TM
  • ON Semiconductor

  • ON Semiconductor FQB5N30TM
  • FQB5N30TM PDF Datasheet
  • FQB5N30TM Stock

  • FQB5N30TM Pinout
  • Datasheet FQB5N30TM
  • FQB5N30TM Supplier

  • ON Semiconductor Distributor
  • FQB5N30TM Price
  • FQB5N30TM Distributor

FQB5N30TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds430pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

TK31N60X,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

88mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

230W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

BSC031N06NS3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

IRF7321D2TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

RRR030P03TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96

SCH1435-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

89mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

265pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-SCH

Package / Case

SOT-563, SOT-666

Recently Sold

NDT452AP

NDT452AP

ON Semiconductor

MOSFET P-CH 30V 5A SOT-223-4

HSMH-C170

HSMH-C170

Broadcom

LED RED DIFFUSED CHIP SMD

JAN1N5811

JAN1N5811

Microsemi

DIODE GEN PURP 150V 6A AXIAL

ACF451832-333-TD01

ACF451832-333-TD01

TDK

FILTER LC(T) SMD

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON

MT29F4G01AAADDHC:D

MT29F4G01AAADDHC:D

Micron Technology Inc.

IC FLASH 4G SPI 63VFBGA

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

PRTR5V0U2X,215

PRTR5V0U2X,215

Nexperia

TVS DIODE 5.5V SOT143B

LTC6813ILWE-1#3ZZPBF

LTC6813ILWE-1#3ZZPBF

Linear Technology/Analog Devices

18 CHANNEL MULTICELL BATTERY STA

1SS319(TE85L,F)

1SS319(TE85L,F)

Toshiba Semiconductor and Storage

DIODE SCHOTKY GP 40V 100MA SC61B

MAX3233EEWP

MAX3233EEWP

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SOIC