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TK31N60X,S1F

TK31N60X,S1F

For Reference Only

Part Number TK31N60X,S1F
PNEDA Part # TK31N60X-S1F
Description MOSFET N-CH 600V 30.8A TO-247
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK31N60X Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK31N60X,S1F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK31N60X Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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