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FQD13N10LTM_NBEL001

FQD13N10LTM_NBEL001

For Reference Only

Part Number FQD13N10LTM_NBEL001
PNEDA Part # FQD13N10LTM_NBEL001
Description MOSFET N-CH 100V 10A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD13N10LTM_NBEL001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD13N10LTM_NBEL001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD13N10LTM_NBEL001, FQD13N10LTM_NBEL001 Datasheet (Total Pages: 9, Size: 1,219.05 KB)
PDFFQD13N10LTM_NBEL001 Datasheet Cover
FQD13N10LTM_NBEL001 Datasheet Page 2 FQD13N10LTM_NBEL001 Datasheet Page 3 FQD13N10LTM_NBEL001 Datasheet Page 4 FQD13N10LTM_NBEL001 Datasheet Page 5 FQD13N10LTM_NBEL001 Datasheet Page 6 FQD13N10LTM_NBEL001 Datasheet Page 7 FQD13N10LTM_NBEL001 Datasheet Page 8 FQD13N10LTM_NBEL001 Datasheet Page 9

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FQD13N10LTM_NBEL001 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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